Publikationen, an denen er mitarbeitet Adrián Hierro Cano (6)

2015

  1. Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots

    Semiconductor Science and Technology, Vol. 30, Núm. 11

2012

  1. High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

    Applied Physics Letters, Vol. 101, Núm. 25

  2. Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

    Nanoscale Research Letters, Vol. 7

  3. Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

    Applied Physics Letters, Vol. 100, Núm. 1

2011

  1. Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots

    Journal of Physics: Conference Series

  2. Inhibition of in desorption in diluted nitride InAsN quantum dots

    Applied Physics Letters, Vol. 98, Núm. 7