MARIKO
SUZUKI
Posdoctoral Investigadora Distinguida
National Institute for Materials Science
Tsukuba, JapónPublications in collaboration with researchers from National Institute for Materials Science (9)
2013
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Potential of diamond power devices
Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2008
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n-Type Doping of Diamond
Physics and Applications of CVD Diamond (Wiley-VCH Verlag GmbH & Co. KGaA), pp. 237-256
2006
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Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces
Physica Status Solidi (A) Applications and Materials Science
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n-Type doping of diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 203, Núm. 13, pp. 3358-3366
2005
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Admittance spectroscopy for phosphorus-doped n -type diamond epilayer
Applied Physics Letters, Vol. 86, Núm. 23, pp. 1-3
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Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer
Diamond and Related Materials
2004
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Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers
Diamond and Related Materials
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Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes
Applied Physics Letters, Vol. 84, Núm. 13, pp. 2349-2351
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Electrical properties of B-related acceptor in B-doped homoepitaxial diamond layers grown by microwave plasma CVD
Diamond and Related Materials, Vol. 13, Núm. 1, pp. 198-202