University of Tsukuba-ko ikertzaileekin lankidetzan egindako argitalpenak (8)

2022

  1. High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

    Applied Physics Letters, Vol. 121, Núm. 7

  2. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

2018

  1. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10

2015

  1. Photo-induced redox catalysis for proton reduction to hydrogen with homogeneous molecular systems using rhodium-based catalysts

    Coordination Chemistry Reviews, Vol. 304-305, pp. 20-37

2014

  1. Observation of negative electron affinity in low-voltage discharging boron-doped polycrystalline diamond

    Japanese Journal of Applied Physics

2013

  1. Potential of diamond power devices

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs

2006

  1. Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces

    Physica Status Solidi (A) Applications and Materials Science

2004

  1. Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers

    Diamond and Related Materials