Departamento
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Publicaciones (61) Publicaciones en las que ha participado algún/a investigador/a
2006
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1.3m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature
Electronics Letters, Vol. 42, Núm. 16, pp. 922-923
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A combined stopped-flow, electrospray ionization mass spectrometry and31P NMR study on the acetic acid-mediated fragmentation of the hydroxo-chalcogenide cluster [W3Se4(OH)3(dmpe)3]+ (dmpe = 1,2-bis(dimethylphosphanyl)ethane) to yield the dinuclear [W2Se2(µ-Se)2(µ-CH3CO2)(dmpe)2]+ complex
Journal of the Chemical Society. Dalton Transactions, pp. 5725-5733
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Application of diamond film to cold cathode fluorescent lamps for LCD backlighting
Diamond and Related Materials, Vol. 15, Núm. 11-12 SPEC. ISS., pp. 1998-2000
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Applications of atomic scale scanning transmission electron microscopy
Microscopy and Microanalysis
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Biocorrosion of carbon steel alloys by an hydrogenotrophic sulfate-reducing bacterium Desulfovibrio capillatus isolated from a Mexican oil field separator
Corrosion Science, Vol. 48, Núm. 9, pp. 2417-2431
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Carbon nanotubes structure modification and synthesis of nanocrystalline diamond-nanotubes composites
Microscopy and Microanalysis
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Catalytic decomposition of hydrazine on iron nitride catalysts
Catalysis Communications, Vol. 7, Núm. 3, pp. 187-191
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Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy
Superlattices and Microstructures, Vol. 40, Núm. 4-6 SPEC. ISS., pp. 289-294
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Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD
Thin Solid Films, Vol. 511-512, pp. 103-107
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Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites
Nanotechnology, Vol. 17, Núm. 22, pp. 5652-5658
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Direct experimental evidence of metastable epitaxial zinc-blende MgS
Applied Physics Letters, Vol. 89, Núm. 12
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Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy
Physica Status Solidi (C) Current Topics in Solid State Physics
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Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
Journal of Applied Physics, Vol. 100, Núm. 9
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Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
Journal of Applied Physics, Vol. 100, Núm. 9
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Effect of growth temperature on AlGaInN layers: A TEM analysis
Physica Status Solidi (C) Current Topics in Solid State Physics
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Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells
Microscopy and Microanalysis
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Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces
Physica Status Solidi (A) Applications and Materials Science
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Electron spectroscopy of carbon materials: Experiment and theory
Journal of Physics: Conference Series
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Formation of discontinuous Al2O3 layers during high-temperature oxidation of RuAl alloys
Journal of Materials Research, Vol. 21, Núm. 1, pp. 276-286
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Ge-modified Si(100) substrates for the growth of 3C-SiC (100)
Applied Physics Letters, Vol. 88, Núm. 21