Publicaciones (61) Publicaciones en las que ha participado algún/a investigador/a

2006

  1. 1.3m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

    Electronics Letters, Vol. 42, Núm. 16, pp. 922-923

  2. A combined stopped-flow, electrospray ionization mass spectrometry and31P NMR study on the acetic acid-mediated fragmentation of the hydroxo-chalcogenide cluster [W3Se4(OH)3(dmpe)3]+ (dmpe = 1,2-bis(dimethylphosphanyl)ethane) to yield the dinuclear [W2Se2(µ-Se)2(µ-CH3CO2)(dmpe)2]+ complex

    Journal of the Chemical Society. Dalton Transactions, pp. 5725-5733

  3. Application of diamond film to cold cathode fluorescent lamps for LCD backlighting

    Diamond and Related Materials, Vol. 15, Núm. 11-12 SPEC. ISS., pp. 1998-2000

  4. Applications of atomic scale scanning transmission electron microscopy

    Microscopy and Microanalysis

  5. Biocorrosion of carbon steel alloys by an hydrogenotrophic sulfate-reducing bacterium Desulfovibrio capillatus isolated from a Mexican oil field separator

    Corrosion Science, Vol. 48, Núm. 9, pp. 2417-2431

  6. Carbon nanotubes structure modification and synthesis of nanocrystalline diamond-nanotubes composites

    Microscopy and Microanalysis

  7. Catalytic decomposition of hydrazine on iron nitride catalysts

    Catalysis Communications, Vol. 7, Núm. 3, pp. 187-191

  8. Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy

    Superlattices and Microstructures, Vol. 40, Núm. 4-6 SPEC. ISS., pp. 289-294

  9. Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD

    Thin Solid Films, Vol. 511-512, pp. 103-107

  10. Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites

    Nanotechnology, Vol. 17, Núm. 22, pp. 5652-5658

  11. Direct experimental evidence of metastable epitaxial zinc-blende MgS

    Applied Physics Letters, Vol. 89, Núm. 12

  12. Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy

    Physica Status Solidi (C) Current Topics in Solid State Physics

  13. Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network

    Journal of Applied Physics, Vol. 100, Núm. 9

  14. Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers

    Journal of Applied Physics, Vol. 100, Núm. 9

  15. Effect of growth temperature on AlGaInN layers: A TEM analysis

    Physica Status Solidi (C) Current Topics in Solid State Physics

  16. Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells

    Microscopy and Microanalysis

  17. Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces

    Physica Status Solidi (A) Applications and Materials Science

  18. Electron spectroscopy of carbon materials: Experiment and theory

    Journal of Physics: Conference Series

  19. Formation of discontinuous Al2O3 layers during high-temperature oxidation of RuAl alloys

    Journal of Materials Research, Vol. 21, Núm. 1, pp. 276-286

  20. Ge-modified Si(100) substrates for the growth of 3C-SiC (100)

    Applied Physics Letters, Vol. 88, Núm. 21