Publikationen, an denen er mitarbeitet EMILIO JOSE MARQUEZ NAVARRO (36)

1996

  1. A new study of the refractive-index dispersion of Ag-photodoped thin films of As30S70 chalcogenide glass

    Materials Chemistry and Physics, Vol. 44, Núm. 2, pp. 186-189

  2. Computation of the optical constants of thermally-evaporated thin films of GeSe2 chalcogenide glass from their reflection spectra

    Physica Scripta, Vol. 53, Núm. 1, pp. 76-82

  3. Influence of the copper content on the electrical conductivity of amorphous semiconductors from the system CuAsSe

    Materials Chemistry and Physics, Vol. 43, Núm. 3, pp. 287-291

  4. On the Ag-photodissolution phenomenon in As0.35S0.65 chalcogenide glass films

    Journal of Non-Crystalline Solids, Vol. 196, pp. 173-177

1995

  1. Determining the refractive index and average thickness of AsSe semiconducting glass films from wavelength measurements only

    Applied Optics, Vol. 34, Núm. 34, pp. 7907-7913

  2. Influence of temperature and interelectrode distance on the negative differential resistance in metal-chalcogenide glassy semiconductors

    Journal of Materials Science, Vol. 30, Núm. 13, pp. 3407-3414

  3. On the Electrical Switching Characteristics of the Bulk Metal Chalcogenide Glassy Semiconductor Cu0.10As0.40Se0.50 with a Double Point Contact Electrode System

    physica status solidi (a), Vol. 147, Núm. 2, pp. 497-507

  4. Optical characterization of wedge-shaped thin films of amorphous arsenic trisulphide based only on their shrunk transmission spectra

    Thin Solid Films, Vol. 254, Núm. 1-2, pp. 83-91

  5. Optical constants of thermally evaporated amorphous GeSe3 thin films

    Journal of Materials Science, Vol. 30, Núm. 16, pp. 4133-4137

  6. Optical properties of As50Se50 semiconducting glass films of non-uniform thickness deposited by thermal evaporation

    Materials Chemistry & Physics, Vol. 40, Núm. 1, pp. 30-36

1994

  1. On the reversible and athermal photo-vitrification phenomenon of As50Se50 chalcogenide thin films

    Materials Letters, Vol. 20, Núm. 3-4, pp. 183-187

  2. Optical characterization of As2S3 and As2Se3 semiconducting glass films of non-uniform thickness from transmission measurements

    Materials Science and Engineering B, Vol. 25, Núm. 1, pp. 53-59

  3. dc electrical properties of some metal-chalcogenide glassy alloys of the Cu-As-Se system

    Materials Letters, Vol. 19, Núm. 1-2, pp. 69-74

1993

  1. On the influence of Ag-photodoping on the optical properties of AsS glass films

    Journal of Non-Crystalline Solids, Vol. 164-166, Núm. PART 2, pp. 1223-1226

  2. Refractive-index dispersion and optical-absorption edge of physically vapor-deposited films of the As35S65 chalcogenide glass

    Materials Letters, Vol. 17, Núm. 6, pp. 327-332

  3. Thermoelectric and Hall effect in amorphous alloy As0.20Se0.40Te0.40

    Materials Letters, Vol. 17, Núm. 5, pp. 263-267

1992

  1. Calculation of the thickness and optical constants of amorphous arsenic sulphide films from their transmission spectra

    Journal of Physics D: Applied Physics, Vol. 25, Núm. 3, pp. 535-541

  2. Determination of the Refractive Index and Optical Absorption Coefficient of Vapor‐Deposited Amorphous AsS Films from Transmittance Measurements

    physica status solidi (a), Vol. 133, Núm. 2, pp. 499-507

1990

  1. On the generation, by a random method, of spatial atomic configurations of some Cu-As-Se system glassy alloys

    Materials Chemistry and Physics, Vol. 25, Núm. 4, pp. 399-416

1988

  1. On electronic conduction in the pre-switching region of glassy semiconducting alloys As40Se30Te30 and As20Se50Te30

    Materials Science and Engineering, Vol. 100, Núm. C, pp. 229-234