Instituto de Microscopía Electrónica y Materiales (IMEYMAT)
Forschungsinstitut
Ana
Sacedon Ayuso
Publikationen, an denen er mitarbeitet Ana Sacedon Ayuso (11)
1998
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Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs
Materials Science and Technology, Vol. 14, Núm. 12, pp. 1273-1278
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Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs
Thin Solid Films, Vol. 317, Núm. 1-2, pp. 270-273
1997
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Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures
Journal of Crystal Growth, Vol. 182, Núm. 3-4, pp. 281-291
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Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates
Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 106-109
1996
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Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers
Journal of Crystal Growth, Vol. 169, Núm. 4, pp. 649-659
1995
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Design of InGaAs linear graded buffer structures
Applied Physics Letters, pp. 3334
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Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication
Applied Physics Letters, Vol. 67, pp. 3632
1994
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Dislocation distribution in graded composition InGaAs layers
Materials Research Society Symposium Proceedings
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Step-graded buffer layer study of the strain relaxation by transmission electron microscopy
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 497-501
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Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers
Applied Physics Letters, Vol. 65, Núm. 19, pp. 2460-2462
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Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519