Instituto de Microscopía Electrónica y Materiales (IMEYMAT)
Instituto de investigación
Universidad Politécnica de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (46)
2024
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Refractive indices and extinction coefficients of p-type doped Germanium wafers for photovoltaic and thermophotovoltaic devices
Solar Energy Materials and Solar Cells, Vol. 264
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Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages
Applied Surface Science, Vol. 644
2023
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Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
Nanomaterials, Vol. 13, Núm. 5
2022
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Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Applied Surface Science, Vol. 604
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Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications
Nanomaterials, Vol. 12, Núm. 8
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Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate
Nanomaterials, Vol. 12, Núm. 14
2018
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GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)
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Multicationic Sr4Mn3O10 mesostructures: Molten salt synthesis, analytical electron microscopy study and reactivity
Materials Horizons, Vol. 5, Núm. 3, pp. 480-485
2017
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Solution-based synthesis and processing of Sn- and Bi-doped Cu3SbSe4 nanocrystals, nanomaterials and ring-shaped thermoelectric generators
Journal of Materials Chemistry A, Vol. 5, Núm. 6, pp. 2592-2602
2012
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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
2008
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STRESS COMPENSATION BY GaP MONOLAYERS FOR STACKED InAs/GaAs QUANTUM DOTS SOLAR CELLS
PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4
2005
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Comparison of three types of fibre optic hydrogen sensors within the frame of CryoFOS project
17th International Conference on Optical Fibre Sensors, Pts 1 and 2
2004
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Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
Materials Science Forum
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The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
Physica Status Solidi C: Conferences
2003
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Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
Materials Science Forum
2002
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AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE
Materials Research Society Symposium - Proceedings
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Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation
Microelectronics Journal
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Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates
Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543
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The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures
Microelectronics Journal