The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
- Morales, F.M.
- Zgheib, Ch.
- Molina, S.I.
- Araújo, D.
- García, R.
- Fernández, C.
- Sanz-Hervás, A.
- Masri, P.
- Weih, P.
- Stauden, Th.
- Cimalla, V.
- Ambacher, O.
- Pezoldt, J.
ISSN: 1610-1634
Year of publication: 2004
Volume: 1
Issue: 2
Pages: 341-346
Type: Conference paper