Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

  1. Rojas, T.C.
  2. Molina, S.I.
  3. Sacedón, A.
  4. Valtueña, F.
  5. Calleja, E.
  6. García, R.
Revue:
Thin Solid Films

ISSN: 0040-6090

Année de publication: 1998

Volumen: 317

Número: 1-2

Pages: 270-273

Type: Article

DOI: 10.1016/S0040-6090(97)00527-0 GOOGLE SCHOLAR
La source de données: Scopus