Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

  1. Gutiérrez, M.
  2. Reyes, D.F.
  3. Araujo, D.
  4. Landesman, J.P.
  5. Pargon, E.
Revue:
Journal of Electronic Materials

ISSN: 1543-186X,  0361-5235

Année de publication: 2020

Volumen: 49

Número: 9

Pages: 5226-5231

Type: Article

DOI: 10.1007/S11664-020-08312-6 GOOGLE SCHOLAR
La source de données: Scopus