Dislocation generation mechanisms in heavily boron-doped diamond epilayers

  1. Araujo, D.
  2. Lloret, F.
  3. Alba, G.
  4. Alegre, M.P.
  5. Villar, M.P.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2021

Volumen: 118

Número: 5

Type: Article

DOI: 10.1063/5.0031476 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus