Effects of residual impurities on Zn electrical activity in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition

  1. Nishikawa, Y.
  2. Suzuki, M.
  3. Ishikawa, M.
  4. Kokubun, Y.
  5. Hatakoshi, G.-i.
Journal:
Journal of Crystal Growth

ISSN: 0022-0248

Year of publication: 1992

Volume: 123

Issue: 1-2

Pages: 181-187

Type: Article

DOI: 10.1016/0022-0248(92)90022-B GOOGLE SCHOLAR
Data source: Scopus