Effects of residual impurities on Zn electrical activity in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition

  1. Nishikawa, Y.
  2. Suzuki, M.
  3. Ishikawa, M.
  4. Kokubun, Y.
  5. Hatakoshi, G.-i.
Revue:
Journal of Crystal Growth

ISSN: 0022-0248

Année de publication: 1992

Volumen: 123

Número: 1-2

Pages: 181-187

Type: Article

DOI: 10.1016/0022-0248(92)90022-B GOOGLE SCHOLAR
La source de données: Scopus