Ciencia e Ingeniería de los Materiales
TEP120
University of Montpellier
Montpellier, FranciaPublicacions en col·laboració amb investigadors/es de University of Montpellier (19)
2010
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Natural oxidation of InN quantum dots: The role of cubic InN
Physica Status Solidi (C) Current Topics in Solid State Physics
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Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase
Nanotechnology, Vol. 21, Núm. 18
2009
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Structural changes during the natural aging process of InN quantum dots
Journal of Applied Physics, Vol. 105, Núm. 1
2008
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Strain relief and nucleation mechanisms of InN quantum dots
Quantum Dots: Research, Technology and Applications (Nova Science Publishers, Inc.), pp. 267-298
2007
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Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots
Applied Physics Letters, Vol. 91, Núm. 7
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Morphology and stress control in UHVCVD of 3C-SiC(100) on Si
Materials Science Forum
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Morphology and stress control in UHVCVD of 3C-SiC(100) on Si
Materials Science Forum
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Strain mapping at the atomic scale in highly mismatched heterointerfaces
Advanced Functional Materials, Vol. 17, Núm. 14, pp. 2588-2593
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Strain relief analysis of InN quantum dots grown on GaN
Nanoscale Research Letters, Vol. 2, Núm. 9, pp. 442-446
2006
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Ge-modified Si(100) substrates for the growth of 3C-SiC (100)
Applied Physics Letters, Vol. 88, Núm. 21
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Investigation of the interface manipulation in SiC(100) on Si (100) with isovalent impurities
Surface and Interface Analysis
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Misfit relaxation of InN quantum dots: Effect of the GaN capping layer
Applied Physics Letters, Vol. 88, Núm. 15
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Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy
Physica Status Solidi (C) Current Topics in Solid State Physics
2005
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Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
Applied Physics Letters, Vol. 87, Núm. 26, pp. 1-3
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Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111)
Applied Physics Letters, Vol. 87, Núm. 4
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Stress manipulation in CVD grown SiC on Si by mono- and sub-monolayer Ge precoverages
Proceedings - Electrochemical Society
2004
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Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
Materials Science Forum
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SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and Si
Surface and Interface Analysis
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The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
Physica Status Solidi C: Conferences