Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Madrid (36)

2018

  1. GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

2017

  1. Strain-balanced type-II superlattices for efficient multi-junction solar cells

    Scientific Reports, Vol. 7, Núm. 1

  2. The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

    Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122

  3. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289

2014

  1. Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

    Materials Express, Vol. 4, Núm. 1, pp. 41-53

2013

  1. Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy

    Journal of Physics: Conference Series

2012

  1. High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

    Applied Physics Letters, Vol. 101, Núm. 25

  2. InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

    Conference Record of the IEEE Photovoltaic Specialists Conference

2011

  1. Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

    Materials Letters, Vol. 65, Núm. 11, pp. 1608-1610

  2. Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots

    Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778

2010

  1. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    Nanotechnology, Vol. 21, Núm. 14

2009

  1. Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy

    Crystal Growth and Design, Vol. 9, Núm. 2, pp. 1216-1218

  2. High resolution electron microscopy of GaAs capped GaSb nanostructures

    Applied Physics Letters, Vol. 94, Núm. 4

  3. Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

    Applied Physics Letters, Vol. 94, Núm. 4

2008

  1. A method to determine the strain and nucleation sites of stacked nano-objects

    Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426

  2. Experimental and simulated strain field maps in stacked quantum wires

    Microscopy and Microanalysis

2007

  1. Determination of the Strain Field in Nano-Objects from Aberration-Corrected Z-contrast Images

    Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

  2. Direct imaging of quantum wires nucleated at diatomic steps

    Applied Physics Letters, Vol. 91, Núm. 14

  3. Excitons in coupled InAsInP self-assembled quantum wires

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 12

  4. Incorporation of Sb in InAsGaAs quantum dots

    Applied Physics Letters, Vol. 91, Núm. 26