Publications en collaboration avec des chercheurs de Centre National de la Recherche Scientifique (24)

2024

  1. Enhancing luminous transmittance and hysteresis width of VO2-based thermochromic coatings by combining GLAD and RGPP approaches

    Construction and Building Materials, Vol. 419

2022

  1. High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

    Applied Physics Letters, Vol. 121, Núm. 7

  2. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

  2. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

2018

  1. Calibration of a cohesive model for fracture in low cross-linked epoxy resins

    Polymers, Vol. 10, Núm. 12

  2. Device formation and the characterizations

    Power Electronics Device Applications of Diamond Semiconductors (Elsevier), pp. 295-382

  3. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10

  4. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

    Applied Surface Science, Vol. 461, pp. 221-226

  5. Power Electronics Device Applications of Diamond Semiconductors

    Elsevier, pp. 1-452

2017

  1. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Applied Surface Science, Vol. 395, pp. 200-207

2016

  1. Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 381, pp. 39-44

2015

  1. TEM study of defects versus growth orientations in heavily boron-doped diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473

2014

  1. Diamond as substrate for 3C-SiC growth: A TEM study

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306

  2. Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371

2011

  1. Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

    Diamond and Related Materials, Vol. 20, Núm. 3, pp. 428-432

2010

  1. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    Nanotechnology, Vol. 21, Núm. 14

  2. Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates

    Physica Status Solidi (A) Applications and Materials, Vol. 207, Núm. 9, pp. 2023-2028

  3. Spatially correlated microstructure and superconductivity in polycrystalline boron-doped diamond

    Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 3

  4. TEM study of superconducting polycrystalline diamond

    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES