RAFAEL
GARCIA ROJA
Profesor Emérito
Publicaciones en las que colabora con RAFAEL GARCIA ROJA (81)
2012
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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
Scripta Materialia, Vol. 66, Núm. 6, pp. 351-354
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High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures
Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62
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Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO 3(001) substrate
Physica Status Solidi (A) Applications and Materials Science, Vol. 209, Núm. 4, pp. 657-662
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Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO 3(0 0 1)
Acta Materialia, Vol. 60, Núm. 5, pp. 1929-1936
2011
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Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots
Journal of Physics: Conference Series
2010
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Natural oxidation of InN quantum dots: The role of cubic InN
Physica Status Solidi (C) Current Topics in Solid State Physics
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Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase
Nanotechnology, Vol. 21, Núm. 18
2009
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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12
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Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing
Applied Physics Letters, Vol. 94, Núm. 4
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Structural changes during the natural aging process of InN quantum dots
Journal of Applied Physics, Vol. 105, Núm. 1
2008
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High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells
Microscopy and Microanalysis
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Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells
Springer Series in Materials Science (Springer Verlag), pp. 199-221
2007
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Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots
Applied Physics Letters, Vol. 91, Núm. 7
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Critical strain region evaluation of self-assembled semiconductor quantum dots
Nanotechnology, Vol. 18, Núm. 47
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Kinetic considerations on the phase separation of GaInNAs quantum wells
Physica Status Solidi (C) Current Topics in Solid State Physics
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Strain mapping at the atomic scale in highly mismatched heterointerfaces
Advanced Functional Materials, Vol. 17, Núm. 14, pp. 2588-2593
2006
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Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells
Microscopy and Microanalysis
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Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices
Applied Physics Letters, Vol. 88, Núm. 19
2005
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An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells
Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1096-1102
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Characterization of structure and defects in dot-in-well laser structures
Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 793-797