DANIEL
ARAUJO GAY
Catedrático de Universidad
MARINA
GUTIERREZ PEINADO
Profesora Titular de Universidad
Publicaciones en las que colabora con MARINA GUTIERREZ PEINADO (21)
2023
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Epitaxial Growth of Boron Carbide on 4H-SiC
Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8
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Low temperature growth of nanocrystalline diamond: Insight thermal property
Diamond and Related Materials, Vol. 137
2021
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Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
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Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers
Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5
2020
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Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching
Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231
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Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization
Surface and Coatings Technology, Vol. 397
2019
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How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi-Stack
Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 10
2018
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Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Nanomaterials, Vol. 8, Núm. 8
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Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
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GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates
Journal of Electronic Materials
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High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
Applied Physics Letters, Vol. 112, Núm. 10
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Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837
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Silicon (001) heteroepitaxy on 3C-SiC(001)/Si(001) seed
Materials Science Forum
2017
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MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density
Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11
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Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping
Applied Physics Letters, Vol. 110, Núm. 9
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Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
Applied Surface Science, Vol. 395, pp. 195-199
2013
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Quantification of In x Ga 1-x P composition modulation by nanometric scale HAADF simulations
Applied Surface Science
2010
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Composition modulation analysis of In x Ga 1-x P layers grown on (0 0 1) germanium substrates
Applied Surface Science, Vol. 256, Núm. 18, pp. 5681-5683
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Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates
Physica Status Solidi (A) Applications and Materials, Vol. 207, Núm. 9, pp. 2023-2028
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Mechanism of phase separation generation in ge-based solar cell tunnel junctions
Journal of Nanoscience and Nanotechnology