DANIEL
ARAUJO GAY
Catedrático de Universidad
Universidad Politécnica de Madrid
Madrid, EspañaPublications in collaboration with researchers from Universidad Politécnica de Madrid (10)
2004
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Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
Materials Science Forum
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The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
Physica Status Solidi C: Conferences
2003
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Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
Materials Science Forum
1999
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Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence
Microelectronics Journal, Vol. 30, Núm. 4, pp. 413-417
1998
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Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs
Materials Science and Technology, Vol. 14, Núm. 12, pp. 1273-1278
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Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs
Applied Surface Science, Vol. 123-124, pp. 303-307
1995
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Design of InGaAs linear graded buffer structures
Applied Physics Letters, pp. 3334
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Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication
Applied Physics Letters, Vol. 67, pp. 3632
1994
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Step-graded buffer layer study of the strain relaxation by transmission electron microscopy
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 497-501
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Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519