![Foto de DANIEL](/img/uploaded/E1F92E8A72C11BDAC898C5147FA60959.png)
DANIEL
ARAUJO GAY
Catedrático de Universidad
Publikationen (142) Publikationen von DANIEL ARAUJO GAY
2024
-
Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics
ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871
-
Microscopic evidence of carbide formation at the interface of tungsten-based ohmic contacts on diamond
Applied Surface Science, Vol. 667
-
Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study
Nanotechnology, Vol. 35, Núm. 41
2023
-
Epitaxial Growth of Boron Carbide on 4H-SiC
Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8
-
Low temperature growth of nanocrystalline diamond: Insight thermal property
Diamond and Related Materials, Vol. 137
2022
-
Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
2021
-
Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes
Applied Surface Science, Vol. 537
-
Diamond for electronics: Materials, processing and devices
Materials, Vol. 14, Núm. 22
-
Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
-
Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Applied Physics Letters, Vol. 118, Núm. 5
-
Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers
Carbon, Vol. 172, pp. 463-473
-
Selectively boron doped homoepitaxial diamond growth for power device applications
Applied Physics Letters, Vol. 118, Núm. 2
-
Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers
Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5
2020
-
Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching
Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231
-
Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization
Surface and Coatings Technology, Vol. 397
-
Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
-
Surface states of (100) o-terminated diamond: Towards other 1 × 1:O reconstruction models
Nanomaterials, Vol. 10, Núm. 6, pp. 1-15
2019
-
How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi-Stack
Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 10
2018
-
Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
-
Calibration of a cohesive model for fracture in low cross-linked epoxy resins
Polymers, Vol. 10, Núm. 12