DANIEL
ARAUJO GAY
Catedrático de Universidad
Publicaciones (140) Publicaciones en las que ha participado algún/a investigador/a
2024
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Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics
ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871
2023
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Epitaxial Growth of Boron Carbide on 4H-SiC
Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8
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Low temperature growth of nanocrystalline diamond: Insight thermal property
Diamond and Related Materials, Vol. 137
2022
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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
2021
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Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes
Applied Surface Science, Vol. 537
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Diamond for electronics: Materials, processing and devices
Materials, Vol. 14, Núm. 22
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Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
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Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Applied Physics Letters, Vol. 118, Núm. 5
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Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers
Carbon, Vol. 172, pp. 463-473
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Selectively boron doped homoepitaxial diamond growth for power device applications
Applied Physics Letters, Vol. 118, Núm. 2
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Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers
Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5
2020
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Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching
Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231
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Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization
Surface and Coatings Technology, Vol. 397
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
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Surface states of (100) o-terminated diamond: Towards other 1 × 1:O reconstruction models
Nanomaterials, Vol. 10, Núm. 6, pp. 1-15
2019
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How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi-Stack
Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 10
2018
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Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
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Calibration of a cohesive model for fracture in low cross-linked epoxy resins
Polymers, Vol. 10, Núm. 12
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Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Nanomaterials, Vol. 8, Núm. 8
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Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 10