DANIEL
FERNANDEZ DE LOS REYES
Profesor Titular de Universidad
![Foto de Adrián](/img/nophoto.png)
Adrián
Hierro Cano
Publicaciones en las que colabora con Adrián Hierro Cano (21)
2020
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Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells
Solar Energy Materials and Solar Cells, Vol. 210
2019
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Effect of capping rate on InAs/GaAs quantum dot solar cells
Proceedings of SPIE - The International Society for Optical Engineering
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Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
Solar Energy Materials and Solar Cells, Vol. 200
2018
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GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
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Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
Applied Surface Science, Vol. 444, pp. 260-266
2017
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Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
Nanotechnology, Vol. 28, Núm. 42
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Strain-balanced type-II superlattices for efficient multi-junction solar cells
Scientific Reports, Vol. 7, Núm. 1
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The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells
Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122
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Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289
2016
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General route for the decomposition of InAs quantum dots during the capping process
Nanotechnology, Vol. 27, Núm. 12
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Impact of alloyed capping layers on the performance of InAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 144, pp. 128-135
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Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
Solar Energy Materials and Solar Cells, Vol. 145, pp. 154-161
2015
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Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots
Semiconductor Science and Technology, Vol. 30, Núm. 11
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Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
Proceedings of SPIE - The International Society for Optical Engineering
2014
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Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
Journal of Applied Physics, Vol. 116, Núm. 13
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GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
Applied Physics Letters, Vol. 105, Núm. 4
2012
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High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Applied Physics Letters, Vol. 101, Núm. 25
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Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
Nanoscale Research Letters, Vol. 7
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Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
Applied Physics Letters, Vol. 100, Núm. 1
2011
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Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots
Journal of Physics: Conference Series