Publicaciones en las que colabora con DANIEL ARAUJO GAY (21)

2023

  1. Epitaxial Growth of Boron Carbide on 4H-SiC

    Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8

  2. Low temperature growth of nanocrystalline diamond: Insight thermal property

    Diamond and Related Materials, Vol. 137

2021

  1. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

  2. Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers

    Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

  2. Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization

    Surface and Coatings Technology, Vol. 397

2019

  1. How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi-Stack

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 10

2018

  1. Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

    Nanomaterials, Vol. 8, Núm. 8

  2. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  3. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Journal of Electronic Materials

  4. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10

  5. Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837

  6. Silicon (001) heteroepitaxy on 3C-SiC(001)/Si(001) seed

    Materials Science Forum

2017

  1. MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density

    Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11

  2. Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

    Applied Physics Letters, Vol. 110, Núm. 9

  3. Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

    Applied Surface Science, Vol. 395, pp. 195-199

2013

  1. Quantification of In x Ga 1-x P composition modulation by nanometric scale HAADF simulations

    Applied Surface Science

2010

  1. Composition modulation analysis of In x Ga 1-x P layers grown on (0 0 1) germanium substrates

    Applied Surface Science, Vol. 256, Núm. 18, pp. 5681-5683

  2. Comparison of the crystalline quality of homoepitaxially grown CVD diamond layer on cleaved and polished substrates

    Physica Status Solidi (A) Applications and Materials, Vol. 207, Núm. 9, pp. 2023-2028

  3. Mechanism of phase separation generation in ge-based solar cell tunnel junctions

    Journal of Nanoscience and Nanotechnology