Publicaciones (18) Publicaciones de JUAN JESUS JIMENEZ RIOS

2024

  1. Enhancing luminous transmittance and hysteresis width of VO2-based thermochromic coatings by combining GLAD and RGPP approaches

    Construction and Building Materials, Vol. 419

2023

  1. Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

    ACS Applied Materials and Interfaces, Vol. 15, Núm. 6, pp. 8624-8635

  2. Facile Fabrication of High-Performance Thermochromic VO2-Based Films on Si for Application in Phase-Change Devices

    Chemistry of Materials, Vol. 35, Núm. 11, pp. 4435-4448

  3. Novel Gas Phase Route Toward Patterned Deposition of Sputter-Free Pt/Al Nanofoils

    Advanced Materials Technologies, Vol. 8, Núm. 18

2022

  1. Characterization of pores in polished low temperature co-fired glass-ceramic composites for optimization of their micromachining

    Surface Topography: Metrology and Properties, Vol. 10, Núm. 4

  2. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

    Scientific Reports, Vol. 12, Núm. 1

2021

  1. Atomically resolved 3D structural reconstruction of small quantum dots

    Nanoscale, Vol. 13, Núm. 16, pp. 7550-7557

2019

  1. (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN

    Journal of Alloys and Compounds, Vol. 783, pp. 697-708

  2. Comprehensive (S)TEM characterization of polycrystalline GaN/AlN layers grown on LTCC substrates

    Ceramics International, Vol. 45, Núm. 7, pp. 9114-9125

  3. LTCC as substrate - Enabling semiconductor and packaging integration

    2019 22nd European Microelectronics and Packaging Conference and Exhibition, EMPC 2019

  4. Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging

    Nanoscale, Vol. 11, Núm. 28, pp. 13632-13638

2018

  1. Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

    Scientific Reports, Vol. 8, Núm. 1

  2. Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

    Journal of Crystal Growth, Vol. 493, pp. 65-75

2017

  1. Low temperature epitaxial deposition of GaN on LTCC substrates

    2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017

2015

  1. Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

    Applied Physics Letters, Vol. 106, Núm. 7

  2. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    Applied Physics Letters, Vol. 106, Núm. 2

2013

  1. Spontaneous formation of InGaN nanowall network directly on Si

    Applied Physics Letters, Vol. 102, Núm. 17

  2. Uniform low-to-high in composition InGaN layers grown on Si

    Applied Physics Express, Vol. 6, Núm. 11