Publicaciones en las que colabora con RAFAEL GARCIA ROJA (24)

2019

  1. (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN

    Journal of Alloys and Compounds, Vol. 783, pp. 697-708

  2. Comprehensive (S)TEM characterization of polycrystalline GaN/AlN layers grown on LTCC substrates

    Ceramics International, Vol. 45, Núm. 7, pp. 9114-9125

  3. Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging

    Nanoscale, Vol. 11, Núm. 28, pp. 13632-13638

2018

  1. Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics

    Scientific Reports, Vol. 8, Núm. 1

  2. Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

    Journal of Crystal Growth, Vol. 493, pp. 65-75

2017

  1. Low temperature epitaxial deposition of GaN on LTCC substrates

    2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017

2016

  1. Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

    Journal of Microscopy, Vol. 261, Núm. 1, pp. 27-35

2015

  1. Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

    Applied Physics Letters, Vol. 106, Núm. 7

  2. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    Applied Physics Letters, Vol. 106, Núm. 2

2014

  1. Epitaxial growth of Fe islands on LaAlO3 (001) substrates

    Journal of Crystal Growth, Vol. 391, pp. 121-129

2013

  1. Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 24

  2. N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

    Journal of Applied Physics, Vol. 113, Núm. 3

  3. Spontaneous formation of InGaN nanowall network directly on Si

    Applied Physics Letters, Vol. 102, Núm. 17

  4. Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

    Journal of Applied Physics, Vol. 114, Núm. 18

  5. Uniform low-to-high in composition InGaN layers grown on Si

    Applied Physics Express, Vol. 6, Núm. 11

2012

  1. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

  2. Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO 3(001) substrate

    Physica Status Solidi (A) Applications and Materials Science, Vol. 209, Núm. 4, pp. 657-662

  3. Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO 3(0 0 1)

    Acta Materialia, Vol. 60, Núm. 5, pp. 1929-1936

  4. Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

    Journal of Crystal Growth, Vol. 357, Núm. 1, pp. 35-41

2011

  1. Fabrication of barbed-shaped SnO@SnO2 core/shell nanowires

    Journal of Physical Chemistry C, Vol. 115, Núm. 11, pp. 4495-4501