Publicacións nas que colabora con Pierre Ruterana (5)

2002

  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings

  3. Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

    Physica Status Solidi (B) Basic Research

2001

  1. A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

    Applied Physics Letters, Vol. 79, Núm. 22, pp. 3588-3590

  2. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690