Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Departament
Ilmenau University of Technology
Ilmenau, AlemaniaPublicacions en col·laboració amb investigadors/es de Ilmenau University of Technology (46)
2024
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Impact of Sample Preparation Approach on Transmission Electron Microscopy Investigation of Sputtered AlNi Multilayers Used for Reactive Soldering
Advanced Engineering Materials
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Influence of Additional Intermediate Thick Al Layers on the Reaction Propagation and Heat Flow of Al/Ni Reactive Multilayers
Advanced Engineering Materials
2023
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Novel Gas Phase Route Toward Patterned Deposition of Sputter-Free Pt/Al Nanofoils
Advanced Materials Technologies, Vol. 8, Núm. 18
2022
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Characterization of pores in polished low temperature co-fired glass-ceramic composites for optimization of their micromachining
Surface Topography: Metrology and Properties, Vol. 10, Núm. 4
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Surface measurement data of polished LTCC: Characterization of pores in polished low temperature co-fired glass-ceramic composites for optimization of their micromachining
Dryad
2021
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Chemoheteroepitaxy of 3C-SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition
Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 24
2019
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Comprehensive (S)TEM characterization of polycrystalline GaN/AlN layers grown on LTCC substrates
Ceramics International, Vol. 45, Núm. 7, pp. 9114-9125
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LTCC as substrate - Enabling semiconductor and packaging integration
2019 22nd European Microelectronics and Packaging Conference and Exhibition, EMPC 2019
2018
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Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics
Scientific Reports, Vol. 8, Núm. 1
2017
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Low temperature epitaxial deposition of GaN on LTCC substrates
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
2013
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N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
Journal of Applied Physics, Vol. 113, Núm. 3
2009
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Determination of the composition of InxGa1-xN from strain measurements
Acta Materialia, Vol. 57, Núm. 19, pp. 5681-5692
2008
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Electron transport properties of indium oxide - Indium nitride metal-oxide-semiconductor heterostructures
Physica Status Solidi (C) Current Topics in Solid State Physics
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Electronic and photoconductive properties of ultrathin InGaN photodetectors
Journal of Applied Physics, Vol. 103, Núm. 7
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InN/In2O3 heterostructures
Physica Status Solidi (C) Current Topics in Solid State Physics
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Structure of cubic polytype indium nitride layers on top of modified sapphire substrates
Physica Status Solidi (C) Current Topics in Solid State Physics
2007
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Coalescence aspects of III-nitride epitaxy
Journal of Applied Physics, Vol. 101, Núm. 5
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Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer
Applied Physics Letters, Vol. 90, Núm. 9
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Effect of island coalescence on structural and electrical properties of InN thin films
Journal of Crystal Growth, Vol. 300, Núm. 1, pp. 50-56
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Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers
Physica Status Solidi (C) Current Topics in Solid State Physics