Publicacions en què col·labora amb DANIEL ARAUJO GAY (28)

2023

  1. Epitaxial Growth of Boron Carbide on 4H-SiC

    Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8

2022

  1. Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

    Diamond and Related Materials, Vol. 126

2021

  1. Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

    Applied Surface Science, Vol. 537

  2. Dislocation generation mechanisms in heavily boron-doped diamond epilayers

    Applied Physics Letters, Vol. 118, Núm. 5

2020

  1. Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization

    Surface and Coatings Technology, Vol. 397

  2. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

2018

  1. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  2. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

    Applied Surface Science, Vol. 461, pp. 221-226

  3. Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837

  4. Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

    Applied Surface Science, Vol. 433, pp. 408-418

2017

  1. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Applied Surface Science, Vol. 395, pp. 200-207

  2. Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation

    Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11

  3. Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

    Applied Surface Science, Vol. 395, pp. 195-199

2015

  1. Potential barrier heights at metal on oxygen-terminated diamond interfaces

    Journal of Applied Physics, Vol. 118, Núm. 20

  2. TEM study of defects versus growth orientations in heavily boron-doped diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473

2014

  1. 3C-SiC seeded growth on diamond substrate by VLS transport

    Materials Science Forum

  2. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Applied Physics Letters, Vol. 105, Núm. 17

  3. Diamond as substrate for 3C-SiC growth: A TEM study

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306

  4. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    Journal of Applied Physics, Vol. 116, Núm. 8

  5. Heteroepitaxial CVD growth of 3C-SiC on diamond substrate

    Materials Science Forum