Didáctica
Departamento
FERNANDO MANUEL
LLORET VIEIRA
Profesor Titular de Universidad
Publicaciones en las que colabora con FERNANDO MANUEL LLORET VIEIRA (14)
2024
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FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier
Applied Surface Science, Vol. 674
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Microscopic evidence of carbide formation at the interface of tungsten-based ohmic contacts on diamond
Applied Surface Science, Vol. 667
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Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study
Nanotechnology, Vol. 35, Núm. 41
2022
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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
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Trends on Educational Gamification: Challenges and Learning Opportunities
MDPI
2021
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Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Applied Physics Letters, Vol. 118, Núm. 5
2020
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
2018
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Aprendizaje mixto en docencia universitaria: recopilación de datos de eficacia comparativa
III Jornadas de Innovación Docente Universitaria UCA
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Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
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Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837
2015
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TEM study of defects versus growth orientations in heavily boron-doped diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473
2014
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Critical boron-doping levels for generation of dislocations in synthetic diamond
Applied Physics Letters, Vol. 105, Núm. 17
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Diamond as substrate for 3C-SiC growth: A TEM study
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306