Física Aplicada
Departamento
DANIEL
ARAUJO GAY
Catedrático de Universidad
Publicaciones en las que colabora con DANIEL ARAUJO GAY (27)
2024
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Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics
ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871
2023
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Low temperature growth of nanocrystalline diamond: Insight thermal property
Diamond and Related Materials, Vol. 137
2022
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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
2021
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Diamond for electronics: Materials, processing and devices
Materials, Vol. 14, Núm. 22
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Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
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Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Applied Physics Letters, Vol. 118, Núm. 5
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Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers
Carbon, Vol. 172, pp. 463-473
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Selectively boron doped homoepitaxial diamond growth for power device applications
Applied Physics Letters, Vol. 118, Núm. 2
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Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers
Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5
2020
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
2018
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Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
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Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Nanomaterials, Vol. 8, Núm. 8
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Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 10
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Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
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GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates
Journal of Electronic Materials
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
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Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837
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Microwave Permittivity of Trace sp2 Carbon Impurities in Sub-Micron Diamond Powders
ACS Omega, Vol. 3, Núm. 2, pp. 2183-2192
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Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration
Crystal Growth and Design, Vol. 18, Núm. 12, pp. 7628-7632
2017
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MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density
Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11