Física Aplicada
Departamento
DANIEL
ARAUJO GAY
Catedrático de Universidad
Publicaciones en las que colabora con DANIEL ARAUJO GAY (32)
2024
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FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier
Applied Surface Science, Vol. 674
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Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics
ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871
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Microscopic evidence of carbide formation at the interface of tungsten-based ohmic contacts on diamond
Applied Surface Science, Vol. 667
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Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study
Nanotechnology, Vol. 35, Núm. 41
2023
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Low temperature growth of nanocrystalline diamond: Insight thermal property
Diamond and Related Materials, Vol. 137
2022
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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
2021
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Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes
Applied Surface Science, Vol. 537
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Diamond for electronics: Materials, processing and devices
Materials, Vol. 14, Núm. 22
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Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
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Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Applied Physics Letters, Vol. 118, Núm. 5
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Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers
Carbon, Vol. 172, pp. 463-473
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Selectively boron doped homoepitaxial diamond growth for power device applications
Applied Physics Letters, Vol. 118, Núm. 2
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Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers
Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5
2020
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
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Surface states of (100) o-terminated diamond: Towards other 1 × 1:O reconstruction models
Nanomaterials, Vol. 10, Núm. 6, pp. 1-15
2018
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Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
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Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Nanomaterials, Vol. 8, Núm. 8
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Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 10
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Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
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GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates
Journal of Electronic Materials