Publicaciones en colaboración con investigadores/as de Centre National de la Recherche Scientifique (39)

2024

  1. Enhancing luminous transmittance and hysteresis width of VO2-based thermochromic coatings by combining GLAD and RGPP approaches

    Construction and Building Materials, Vol. 419

2022

  1. High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

    Applied Physics Letters, Vol. 121, Núm. 7

  2. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

  2. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

2018

  1. Calibration of a cohesive model for fracture in low cross-linked epoxy resins

    Polymers, Vol. 10, Núm. 12

  2. Device formation and the characterizations

    Power Electronics Device Applications of Diamond Semiconductors (Elsevier), pp. 295-382

  3. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10

  4. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

    Applied Surface Science, Vol. 461, pp. 221-226

  5. Multicationic Sr4Mn3O10 mesostructures: Molten salt synthesis, analytical electron microscopy study and reactivity

    Materials Horizons, Vol. 5, Núm. 3, pp. 480-485

2017

  1. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Applied Surface Science, Vol. 395, pp. 200-207

2016

  1. Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography

    Nanoscale Research Letters, Vol. 11, Núm. 1

  2. Direct Synthesis of Highly Conductive tert-Butylthiol-Capped CuInS2 Nanocrystals

    ChemPhysChem, Vol. 17, Núm. 5, pp. 654-659

  3. Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 381, pp. 39-44

  4. UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

    Nano Letters, Vol. 16, Núm. 5, pp. 3260-3267

2015

  1. Straightforward functionalization of breath figures: Simultaneous orthogonal host-guest and pH-responsive interfaces

    Journal of Colloid and Interface Science, Vol. 457, pp. 272-280

  2. Synthesis, Internal Structure, and Formation Mechanism of Monodisperse Tin Sulfide Nanoplatelets

    Journal of the American Chemical Society, Vol. 137, Núm. 31, pp. 9943-9952

  3. TEM study of defects versus growth orientations in heavily boron-doped diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473

2014

  1. Diamond as substrate for 3C-SiC growth: A TEM study

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306

  2. Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371