Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

  1. Mánuel, J.M.
  2. Morales, F.M.
  3. García, R.
  4. Aidam, R.
  5. Kirste, L.
  6. Ambacher, O.
Journal:
Journal of Crystal Growth

ISSN: 0022-0248

Year of publication: 2012

Volume: 357

Issue: 1

Pages: 35-41

Type: Article

DOI: 10.1016/J.JCRYSGRO.2012.07.037 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus