Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

  1. Mánuel, J.M.
  2. Morales, F.M.
  3. García, R.
  4. Aidam, R.
  5. Kirste, L.
  6. Ambacher, O.
Aldizkaria:
Journal of Crystal Growth

ISSN: 0022-0248

Argitalpen urtea: 2012

Alea: 357

Zenbakia: 1

Orrialdeak: 35-41

Mota: Artikulua

DOI: 10.1016/J.JCRYSGRO.2012.07.037 GOOGLE SCHOLAR
Datuen iturria: Scopus