Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

  1. Mánuel, J.M.
  2. Morales, F.M.
  3. García, R.
  4. Aidam, R.
  5. Kirste, L.
  6. Ambacher, O.
Revue:
Journal of Crystal Growth

ISSN: 0022-0248

Année de publication: 2012

Volumen: 357

Número: 1

Pages: 35-41

Type: Article

DOI: 10.1016/J.JCRYSGRO.2012.07.037 GOOGLE SCHOLAR

Objetivos de desarrollo sostenible

La source de données: Scopus