A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

  1. Sanchez, A.M.
  2. Nouet, G.
  3. Ruterana, P.
  4. Pacheco, F.J.
  5. Molina, S.I.
  6. Garcia, R.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2001

Volumen: 79

Número: 22

Pages: 3588-3590

Type: Article

DOI: 10.1063/1.1396322 GOOGLE SCHOLAR
La source de données: Scopus