Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

  1. Araújo, D.
  2. Alegre, M.P.
  3. Piñero, J.C.
  4. Fiori, A.
  5. Bustarret, E.
  6. Jomard, F.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2013

Volume: 103

Issue: 4

Type: Article

DOI: 10.1063/1.4816418 GOOGLE SCHOLAR lock_openOpen access editor