Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

  1. Araújo, D.
  2. Alegre, M.P.
  3. Piñero, J.C.
  4. Fiori, A.
  5. Bustarret, E.
  6. Jomard, F.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2013

Volumen: 103

Número: 4

Type: Article

DOI: 10.1063/1.4816418 GOOGLE SCHOLAR lock_openAccès ouvert editor