High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

1. Stemmer, J.
2. Fedler, F.
3. Klausing, H.
4. Mistele, D.
5. Rotter, T.
6. Semchinova, O.
7. Aderhold, J.
8. Sanchez, A.M.
9. Pacheco, F.J.
10. Molina, S.I.
11. Fehrer, M.
12. Hommel, D.
13. Graul, J.