Universidade de Lisboa-ko ikertzaileekin lankidetzan egindako argitalpenak (12)

2020

  1. Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization

    Surface and Coatings Technology, Vol. 397

2016

  1. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

    Scientific Reports, Vol. 6

2015

  1. Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

    Nanotechnology, Vol. 26, Núm. 42

  2. Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

    Microscopy and Microanalysis, Vol. 21, Núm. 4, pp. 994-1005

  3. The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF-Sputtering

    Journal of Nanomaterials, Vol. 2015

2014

  1. ZnO micro/nanocrystals grown by laser assisted flow deposition

    Proceedings of SPIE - The International Society for Optical Engineering

2013

  1. Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures

    Nanotechnology, Vol. 24, Núm. 50

2012

  1. Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation

    Materials Research Society Symposium Proceedings

  2. Mechanisms of damage formation in Eu-implanted AlN

    Journal of Applied Physics, Vol. 112, Núm. 7

2011

  1. A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature

    Journal of Applied Physics, Vol. 109, Núm. 1

  2. Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction

    EPL, Vol. 96, Núm. 4

  3. The high sensitivity of InN under rare earth ion implantation at medium range energy

    Journal of Physics D: Applied Physics, Vol. 44, Núm. 29