Ciencia e Ingeniería de los Materiales
TEP120
Universidad Complutense de Madrid
Madrid, EspañaUniversidad Complutense de Madrid-ko ikertzaileekin lankidetzan egindako argitalpenak (33)
2019
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Growth of nanocolumnar thin films on patterned substrates at oblique angles
Plasma Processes and Polymers, Vol. 16, Núm. 2
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Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
Nanoscale, Vol. 11, Núm. 28, pp. 13632-13638
2018
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Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
Journal of Crystal Growth, Vol. 493, pp. 65-75
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Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
Applied Surface Science, Vol. 442, pp. 664-672
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Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
Applied Surface Science, Vol. 444, pp. 260-266
2017
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Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
Nanotechnology, Vol. 28, Núm. 42
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Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications
Nanoscale Research Letters, Vol. 12
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The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells
Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122
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Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289
2016
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(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications
Microscopy and Microanalysis
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General route for the decomposition of InAs quantum dots during the capping process
Nanotechnology, Vol. 27, Núm. 12
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Impact of alloyed capping layers on the performance of InAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 144, pp. 128-135
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Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
Solar Energy Materials and Solar Cells, Vol. 145, pp. 154-161
2015
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Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots
Semiconductor Science and Technology, Vol. 30, Núm. 11
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Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
Applied Physics Letters, Vol. 106, Núm. 7
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Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
Proceedings of SPIE - The International Society for Optical Engineering
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Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)
Applied Physics Letters, Vol. 106, Núm. 2
2014
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Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
Journal of Applied Physics, Vol. 116, Núm. 13
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GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
Applied Physics Letters, Vol. 105, Núm. 4
2013
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Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
Microelectronic Engineering, Vol. 112, pp. 193-197