Publicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (39)

2024

  1. Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages

    Applied Surface Science, Vol. 644

2023

  1. Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

    Nanomaterials, Vol. 13, Núm. 5

2022

  1. Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

    Applied Surface Science, Vol. 604

  2. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Nanomaterials, Vol. 12, Núm. 8

  3. Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

    Nanomaterials, Vol. 12, Núm. 14

2018

  1. GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)

2012

  1. InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)

2004

  1. Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

    Materials Science Forum

  2. The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

    Physica Status Solidi C: Conferences

2003

  1. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

2002

  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings

  3. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

    Microelectronics Journal

  4. Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

    Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543

  5. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

    Microelectronics Journal

2001

  1. Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

    Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392

  2. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690

1999

  1. Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 427-431

  2. Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

    Journal of Crystal Growth, Vol. 201, pp. 296-317

  3. Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 401-406