DANIEL
ARAUJO GAY
Catedrático de Universidad
MARIA DE LA PAZ
ALEGRE SALGUERO
Profesora Sustituta Interina
Publicacions en què col·labora amb MARIA DE LA PAZ ALEGRE SALGUERO (15)
2023
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Epitaxial Growth of Boron Carbide on 4H-SiC
Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8
2021
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Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Applied Physics Letters, Vol. 118, Núm. 5
2020
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Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization
Surface and Coatings Technology, Vol. 397
2018
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
2015
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TEM study of defects versus growth orientations in heavily boron-doped diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473
2014
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Critical boron-doping levels for generation of dislocations in synthetic diamond
Applied Physics Letters, Vol. 105, Núm. 17
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Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures
Journal of Applied Physics, Vol. 116, Núm. 8
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Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371
2013
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Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers
Applied Physics Letters, Vol. 103, Núm. 4
2011
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Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 4, pp. 1366-1370
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Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis
Diamond and Related Materials, Vol. 20, Núm. 3, pp. 428-432
2010
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Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers
Diamond and Related Materials, Vol. 19, Núm. 7-9, pp. 904-907
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Local boron doping quantification in homoepitaxial diamond structures
Diamond and Related Materials, Vol. 19, Núm. 7-9, pp. 972-975
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TEM study of superconducting polycrystalline diamond
AIP Conference Proceedings
2009
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A microstructural study of superconductive nanocrystalline diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 206, Núm. 9, pp. 1986-1990