Publicaciones en colaboración con investigadores/as de Universidad Complutense de Madrid (14)

2018

  1. Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications

    Applied Surface Science, Vol. 442, pp. 664-672

  2. Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate

    Applied Surface Science, Vol. 444, pp. 260-266

2017

  1. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

    Nanotechnology, Vol. 28, Núm. 42

  2. Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

    Nanoscale Research Letters, Vol. 12

  3. The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

    Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122

  4. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289

2016

  1. (S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications

    Microscopy and Microanalysis

  2. General route for the decomposition of InAs quantum dots during the capping process

    Nanotechnology, Vol. 27, Núm. 12

  3. Impact of alloyed capping layers on the performance of InAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 144, pp. 128-135

  4. Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots

    Solar Energy Materials and Solar Cells, Vol. 145, pp. 154-161

2015

  1. Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

    Proceedings of SPIE - The International Society for Optical Engineering

2014

  1. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    Journal of Applied Physics, Vol. 116, Núm. 13

  2. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    Applied Physics Letters, Vol. 105, Núm. 4

2010

  1. Inx(GayAl1-y)1-xAs quaternary alloys for quantum dot intermediate band solar cells

    Energy Procedia