Publicaciones (75) Publicaciones de MARINA GUTIERREZ PEINADO

2023

  1. Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity

    Applied Surface Science, Vol. 615

  2. Deposition and Characterisation of a Diamond/Ti/Diamond Multilayer Structure

    Coatings, Vol. 13, Núm. 11

  3. Epitaxial Growth of Boron Carbide on 4H-SiC

    Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8

  4. High phosphorous incorporation in (100)-oriented MP CVD diamond growth

    Diamond and Related Materials, Vol. 133

  5. Low temperature growth of nanocrystalline diamond: Insight thermal property

    Diamond and Related Materials, Vol. 137

2022

  1. High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

    Applied Physics Letters, Vol. 121, Núm. 7

  2. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

2021

  1. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

  2. Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers

    Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

  2. Improved field electron emission properties of phosphorus and nitrogen co-doped nanocrystalline diamond films

    Nanomaterials, Vol. 10, Núm. 6

  3. Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization

    Surface and Coatings Technology, Vol. 397

2019

  1. How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi-Stack

    Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 10

2018

  1. Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

    Nanomaterials, Vol. 8, Núm. 8

  2. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  3. Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates

    IET Optoelectronics, Vol. 12, Núm. 1, pp. 2-4

  4. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Journal of Electronic Materials

  5. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10

  6. Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837

  7. Silicon (001) heteroepitaxy on 3C-SiC(001)/Si(001) seed

    Materials Science Forum