MARINA
GUTIERREZ PEINADO
Profesora Titular de Universidad
Publications (75) MARINA GUTIERREZ PEINADO publications
2023
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Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity
Applied Surface Science, Vol. 615
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Deposition and Characterisation of a Diamond/Ti/Diamond Multilayer Structure
Coatings, Vol. 13, Núm. 11
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Epitaxial Growth of Boron Carbide on 4H-SiC
Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8
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High phosphorous incorporation in (100)-oriented MP CVD diamond growth
Diamond and Related Materials, Vol. 133
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Low temperature growth of nanocrystalline diamond: Insight thermal property
Diamond and Related Materials, Vol. 137
2022
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High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
Applied Physics Letters, Vol. 121, Núm. 7
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High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
Nanomaterials, Vol. 12, Núm. 23
2021
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Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
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Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers
Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5
2020
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Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching
Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231
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Improved field electron emission properties of phosphorus and nitrogen co-doped nanocrystalline diamond films
Nanomaterials, Vol. 10, Núm. 6
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Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization
Surface and Coatings Technology, Vol. 397
2019
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How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi-Stack
Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 10
2018
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Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Nanomaterials, Vol. 8, Núm. 8
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Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
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Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates
IET Optoelectronics, Vol. 12, Núm. 1, pp. 2-4
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GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates
Journal of Electronic Materials
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High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
Applied Physics Letters, Vol. 112, Núm. 10
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Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837
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Silicon (001) heteroepitaxy on 3C-SiC(001)/Si(001) seed
Materials Science Forum