FERNANDO MANUEL
LLORET VIEIRA
Profesor Titular de Universidad
Grenoble Alpes University
Saint-Martin-d’Hères, FranciaPublications in collaboration with researchers from Grenoble Alpes University (14)
2022
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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
2021
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Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
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Selectively boron doped homoepitaxial diamond growth for power device applications
Applied Physics Letters, Vol. 118, Núm. 2
2020
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
2018
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Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
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Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Nanomaterials, Vol. 8, Núm. 8
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Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 10
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Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
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Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837
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Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration
Crystal Growth and Design, Vol. 18, Núm. 12, pp. 7628-7632
2017
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MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density
Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11
2016
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Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates
Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 10, pp. 2570-2574
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Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
Applied Physics Letters, Vol. 108, Núm. 18
2014
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Critical boron-doping levels for generation of dislocations in synthetic diamond
Applied Physics Letters, Vol. 105, Núm. 17