MARIA DEL PILAR
VILLAR CASTRO
Profesora Titular de Universidad
DANIEL
ARAUJO GAY
Catedrático de Universidad
Publications by the researcher in collaboration with DANIEL ARAUJO GAY (34)
2024
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Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics
ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871
2021
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Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes
Applied Surface Science, Vol. 537
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Diamond for electronics: Materials, processing and devices
Materials, Vol. 14, Núm. 22
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Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Applied Physics Letters, Vol. 118, Núm. 5
2020
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Surface states of (100) o-terminated diamond: Towards other 1 × 1:O reconstruction models
Nanomaterials, Vol. 10, Núm. 6, pp. 1-15
2018
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Calibration of a cohesive model for fracture in low cross-linked epoxy resins
Polymers, Vol. 10, Núm. 12
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
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Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective
Applied Surface Science, Vol. 433, pp. 408-418
2017
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Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
Applied Surface Science, Vol. 395, pp. 200-207
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Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation
Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11
2016
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Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates
Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 10, pp. 2570-2574
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Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
Applied Physics Letters, Vol. 108, Núm. 18
2015
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Potential barrier heights at metal on oxygen-terminated diamond interfaces
Journal of Applied Physics, Vol. 118, Núm. 20
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Si NWs conversion to Si-SiC core-shell NWs by MBE
Materials Science Forum
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TEM study of defects versus growth orientations in heavily boron-doped diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473
2014
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Critical boron-doping levels for generation of dislocations in synthetic diamond
Applied Physics Letters, Vol. 105, Núm. 17
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Diamond as substrate for 3C-SiC growth: A TEM study
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306
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Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371
2013
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Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
Microelectronic Engineering, Vol. 112, pp. 193-197
2012
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Multi-technique analysis of high quality HPHT diamond crystal
Journal of Crystal Growth, Vol. 353, Núm. 1, pp. 115-119