Publikationen, an denen er mitarbeitet FERNANDO MANUEL LLORET VIEIRA (32)

2024

  1. Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics

    ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871

2023

  1. Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity

    Applied Surface Science, Vol. 615

  2. Deposition and Characterisation of a Diamond/Ti/Diamond Multilayer Structure

    Coatings, Vol. 13, Núm. 11

  3. High phosphorous incorporation in (100)-oriented MP CVD diamond growth

    Diamond and Related Materials, Vol. 133

  4. Low temperature growth of nanocrystalline diamond: Insight thermal property

    Diamond and Related Materials, Vol. 137

2022

  1. Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

    Diamond and Related Materials, Vol. 126

2021

  1. Diamond for electronics: Materials, processing and devices

    Materials, Vol. 14, Núm. 22

  2. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

  3. Dislocation generation mechanisms in heavily boron-doped diamond epilayers

    Applied Physics Letters, Vol. 118, Núm. 5

  4. Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

    Carbon, Vol. 172, pp. 463-473

  5. Selectively boron doped homoepitaxial diamond growth for power device applications

    Applied Physics Letters, Vol. 118, Núm. 2

  6. Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers

    Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5

2020

  1. Improved field electron emission properties of phosphorus and nitrogen co-doped nanocrystalline diamond films

    Nanomaterials, Vol. 10, Núm. 6

  2. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

2018

  1. Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 7

  2. Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

    Nanomaterials, Vol. 8, Núm. 8

  3. Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 10

  4. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  5. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Journal of Electronic Materials

  6. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

    Applied Surface Science, Vol. 461, pp. 221-226