Instituto de Microscopía Electrónica y Materiales (IMEYMAT)
Instituto de investigación
Fernando Bernabé
Naranjo Vega
Publicaciones en las que colabora con Fernando Bernabé Naranjo Vega (9)
2022
2021
2018
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Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
AIP Advances, Vol. 8, Núm. 11
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Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
Journal of Alloys and Compounds, Vol. 769, pp. 824-830
2012
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Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
Physica Status Solidi (A) Applications and Materials Science, Vol. 209, Núm. 1, pp. 17-20
2011
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Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
Applied Physics Letters, Vol. 98, Núm. 3
1999
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Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties
Journal of Crystal Growth, Vol. 201, pp. 296-317
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MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects
Journal of Crystal Growth, Vol. 201, pp. 415-418
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Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE
Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452