The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

  1. Morales, F.M.
  2. Zgheib, Ch.
  3. Molina, S.I.
  4. Araújo, D.
  5. García, R.
  6. Fernández, C.
  7. Sanz-Hervás, A.
  8. Masri, P.
  9. Weih, P.
  10. Stauden, Th.
  11. Cimalla, V.
  12. Ambacher, O.
  13. Pezoldt, J.
Proceedings:
Physica Status Solidi C: Conferences

ISSN: 1610-1634

Year of publication: 2004

Volume: 1

Issue: 2

Pages: 341-346

Type: Conference paper

DOI: 10.1002/PSSC.200303940 GOOGLE SCHOLAR
Data source: Scopus